In additional hardware news to what we published yesterday -- a look at Intel's Kaby Lake (7600K, 7700K, etc.), the X2 Empire unique enclosure, and Logitech's G Pro mouse -- we are today visiting topics of Samsung's GDDR6, SK Hynix's HBM3 R&D, PCIe Gen4 power budget, and Zen's CCX architecture. The biggest news here is Samsung's GDDR6, due for 2018, but it's all important stuff. PCI-e Gen4 is looking at being fully ratified EOY 2016, HBM3 is in R&D, and Zen is imminent and finalized architecturally. We'll talk about it more specifically in our reviews. Anyway, here's the news recap: Transcript Memory manufacturer Samsung is developing GDDR6 as a successor to Micron's brand new GDDR5X, presently only found in the GTX 1080 and Titan XP cards. GDDR6 may feel like a more meaningful successor to GDDR5, though, which has been in production use since 2008. In its present, fully matured form, GDDR5 operates at 8Gbps maximally, including on the RX 480 and GTX 10 series GPUs. Micron demonstrated GDDR5X as capable of approaching 12-13Gbps with proper time to mature the architecture, but is presently shipping the memory in 10Gbps speeds for the nVidia devices. Samsung indicates an operating range of approximately 14Gbps to 16Gbps on GDDR6 at 1.35V, coupled with lower voltages than even GDDR5X by using LP4X. Samsung indicates a power reduction upwards of 20% with post-LP4 memory technology. Samsung is looking toward 2018 for production of GDDR6, giving GDDR5X some breathing room yet. As for HBM, SK Hynix…